By G. W. A. Dummer, J. Mackenzie Robertson
American Microelectronics info Annual 1964-65 presents entire info on diversified microelectronics to be had within the U.S.
summary: American Microelectronics info Annual 1964-65 offers complete info on assorted microelectronics on hand within the U.S
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Extra resources for American microelectronics data annual. 1964-65
125• MAX. ----i � - I ----- '------"" Fig. 1 3 . Outline Drawing, Type BIP- 1 00 1 . 250 11 MAX . 250 _I Mag n etic And Electrical C h a racte ristics Mechan ical C haracteristics The ferromagnetic films are vacuum deposited Ni-Fe alloys. The film's thickness is I 200 angstroms. Wall Coercive Force, H,. 5 Oersteds Recommended Operating Conditions : Word Drive Current = min. 600 ma, max. 800 ma. 2 Oersteds Information Current = min. 80 ma, max. 1 20 ma ( bipolar) Resulting Information Field, H ( 1011git11di11a1 ) Fig.
35 Continued. MONOLITHIC MICROCIRCUITS - BENDIX (Contd) . APPENDIX II TENTATIVE SPECIFICATION BENDIX MASTER ACTIVE SLICE TYPE Absolute Maximum II Ratiµgs: - SWITCHING Temperatures Maximum + 150"C storage Temperature -65 to Operating Temperature + 125°C maximum Maximum Voltages V CIO Collector-to-Isolation Voltage 40 Volts V CBO Collector-to-Base Voltage 40 Volts V CEO Collector-to-Emitter Voltage (Note 2) 20 Volts V EBO Emitter-to-Base Voltage 5. 0 Volts Electrical Characteristics (25°C unless otherwise noted) (Note 4): SYMBOL CHARACTERISTIC CONDITIONS I = 5.
Th rapid , preci se , reliable , economical prototype models and ensure him of identi cal ' c ircuit characte ri st i c s in follow-on production programs . Resi stors and capacitors po s se ssing the following properties can be manufactured by using the Bunker-Ramo approach . If highe r value s of capacitance than tho se attainable in a thin -film stacked capacitor are requi red , miniature capacitors can be appliqued using the same reliable and economic te chnique s employed with active devi ce s .