By Gerhard P. Willeke, Eicke R. Weber
This quantity is the 3rd of a collection of 7 related to photovoltaics. sun cell-related applied sciences lined the following comprise: ribbon silicon; heterojunction crystalline silicon; wafer similar crystalline silicon; and different complex silicon sunlight phone constructions and processes.
Semiconductors and Semimetals has distinct itself during the cautious number of famous authors, editors, and individuals. initially well known because the "Willardson and Beer" sequence, it has succeeded in publishing quite a few landmark volumes and chapters. The sequence publishes well timed, hugely suitable volumes meant for long term effect and reflecting the actually interdisciplinary nature of the sphere. The volumes in Semiconductors and Semimetals were and may remain of significant curiosity to physicists, chemists, fabrics scientists, and equipment engineers in academia, clinical laboratories and smooth industry.
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Extra info for Advances in Photovoltaics: Part 3,
2013b). 2. 22 A selective emitter allows decoupling of the metallized and nonmetallized emitter areas. While the contacted area via screen-printing a high doping concentration at the surface and a deep emitter is beneficial because of the resulting lower contact resistance and the wide firing window, the nonmetallized areas need a lower doping level at the surface resulting in less (Auger) recombination and better surface passivation. , 2010). State-of-the-Art Industrial Crystalline Silicon Solar Cells 43 higher FF, and the lower doping in the nonmetallized areas results in better blue response with higher jsc and higher Voc values due to better surface passivation (and thinner or negligible dead layer).
The texture attacks the Si surface first at areas where not all Si bonds are perfectly saturated. Therefore, the saw damage is needed for a non-uniform attack of the surface. Existing surface defects like cracks are widened and a “worm-like” structure is formed (Fig. 10). Once the saw damage is etched away, the textured surface starts to flatten again for prolonged processing times, as sharp edges are rounded. 8 The etching reaction takes place in two steps, an oxidation 8 Note that the maximum depth of saw damage can be up to around 10 μm, but as predominantly the damaged areas are attacked, less overall removal of Si is needed.
2005). 3. Edge isolation After P diffusion, the PSG layer is etched in dilute HF and impurities gettered toward the PSG are removed. As the highly doped emitter is still present around the wafer edges and at the rear side, it will cause a short circuiting of the diode. , 2001). An elegant way to remove the rear side emitter is by inline etching of the rear side with the wafer floating on the etch solution containing H2O, HF, HNO3, and H2SO4. , 2005). Thereby care has to be taken that the emitter on the front side is not attacked by the etch solution or the atmosphere containing reactive species.